Technique for reducing silicide defects by reducing...

Details Technique for reducing silicide defects by reducing... Technique for reducing silicide defects by reducing...

2008-06-10

2008-06-10

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S655000, C438S657000, C438S710000, C438S745000

Reexamination Certificate

active

07384877

ABSTRACT:
By reducing the effect of particle bombardment during the sequence for forming a metal silicide in semiconductor devices, the defect rate and the metal silicide uniformity may be enhanced. For this purpose, the metal may be deposited without an immediately preceding sputter etch process, wherein, in a particular embodiment, an additional oxidation process is performed to efficiently remove any silicon contaminations and surface impurities by a subsequent wet chemical treatment on the basis of HF, which is followed by the metal deposition.

REFERENCES:
patent: 6025267 (2000-02-01), Pey et al.
patent: 6221767 (2001-04-01), Hsu et al.
patent: 6548421 (2003-04-01), Hamanaka et al.
patent: 6821860 (2004-11-01), Behammer
patent: 6864183 (2005-03-01), Maekawa
patent: 2002/0142616 (2002-10-01), Giewont et al.
patent: 2003/0203606 (2003-10-01), Maekawa
Nam-Sik Kim, et al. “Void Formation During Silicidation and its Influence on the Thermal Stability of Cobalt Silicide” J. Vac. Sci. Technol A. 20(4), Jul./Aug. 2002.

Affiliated with

Also associated with

Rating

Technique for reducing silicide defects by reducing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique for reducing silicide defects by reducing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for reducing silicide defects by reducing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2804137