Technique for reducing plasma-induced etch damage during the...

Details Technique for reducing plasma-induced etch damage during the... Technique for reducing plasma-induced etch damage during the...

2011-08-02

2011-08-02

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S712000, C438S637000, C438S624000, C438S736000

Reexamination Certificate

active

07989352

ABSTRACT:
By forming a conductive material within an etch mask for an anisotropic etch process for patterning openings, such as vias, in a dielectric layer of a metallization structure, the probability for arcing events may be reduced, since excess charge may be laterally distributed. For example, an additional sacrificial conductive layer may be formed or an anti-reflecting coating (ARC) may be provided in the form of a conductive material in order to obtain the lateral charge distribution.

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Translation of Official Communication from German Patent Office for German Patent Application No. 10 2006 041 004.1-33 dated May 19, 2010.

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