Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-10-24
2006-10-24
Elms, Richard (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185260, C365S185280
Reexamination Certificate
active
07126854
ABSTRACT:
The sequence in which the voltages (VSL, VDL, VSG, and VCL) applied to the source/drain regions (S and D), select gate (SG), and (if present) control gate (CG) of a floating-gate field-effect transistor (20) start to change value during a programming operation is controlled so as to avoid adjusting the transistor's programmable threshold voltage toward a programmed value when the transistor is intended to remain in the erased condition, i.e., not go into the programmed condition. With the voltage (VSL) at one source/drain region (S) changing from a nominal value to a programming value, the sequence entails causing the voltage (SG) at the select gate to start changing from a nominal value to a programming-enable value after the voltage at the other source/drain region (D) starts changing from a nominal value to a programming-inhibit value.
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Elms Richard
Meetin Ronald J.
Promos Technologies Inc.
Wendler Eric J.
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