Technique for perfecting the active regions of wide bandgap...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Groove formation

Reexamination Certificate

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C257S076000, C438S492000

Reexamination Certificate

active

10768747

ABSTRACT:
This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.

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