Technique for measuring surface states in metal-insulator-semico

Details Technique for measuring surface states in metal-insulator-semico Technique for measuring surface states in metal-insulator-semico

1975-04-28

1976-11-30

Demeo, Palmer C.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158D, 324 60R, G01R 3126, G01R 2726

Patent

active

039952169

ABSTRACT:
An apparatus for measuring and quantitatively determining the number of surface states at or near the insulator-semiconductor interface in a metal-insulator-semiconductor (MIS) structure by injecting a controlled amount of charge into the insulator to induce a change in the surface state occupancy and measuring simultaneously and directly the amount of charge injected into the insulator, the charge so induced in the semiconductor and in the surface states and the corresponding change in the surface potential of the semiconductor induced by the injected charge.

REFERENCES:
frohman-Bentchkowsky et al., "Charge Transport...", J. of Applied Physics, July 1969, pp. 3307-3319.

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