Technique for manufacturing silicon structures

Details Technique for manufacturing silicon structures Technique for manufacturing silicon structures

2007-02-20

2007-02-20

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S048000, C438S051000, C438S106000

Reexamination Certificate

active

11113554

ABSTRACT:
A technique for manufacturing silicon structures includes etching a cavity into a first side of an epitaxial wafer. A thickness of an epitaxial layer is selected, based on a desired depth of the etched cavity and a desired membrane thickness. The first side of the epitaxial wafer is then bonded to a first side of a handle wafer. After thinning the epitaxial wafer until only the epitaxial layer remains, desired circuitry is formed on a second side of the remaining epitaxial layer, which is opposite the first side of the epitaxial wafer.

REFERENCES:
patent: 4975390 (1990-12-01), Fujii et al.
patent: 6829814 (2004-12-01), Freeman et al.
patent: 2002/0179563 (2002-12-01), Horning et al.
patent: 2003/0079547 (2003-05-01), Baek
patent: 08236788 (1996-09-01), None
patent: 2000039371 (2000-02-01), None
EP 06 07 5842; European Search Report dated Feb. 8 , 2006.

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