Technique for making asymmetric thyristors

Details Technique for making asymmetric thyristors Technique for making asymmetric thyristors

1979-08-23

1981-04-28

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148189, 148190, H01L 21225

Patent

active

042643830

ABSTRACT:
A method for doping a wafer of n-type seimiconductor material having two surfaces includes the steps of applying a boron solution to a first surface of the wafer and heating the wafer to drive the boron into the semiconductor wafer for forming a first p-type region. Both surfaces of the wafer are then exposed to a gallium vapor for forming a second p-type region on the second surface and deepening the extent of the first p-type region.

REFERENCES:
patent: 2873222 (1959-02-01), Derick et al.
patent: 3362858 (1968-01-01), Knopp
patent: 3445302 (1969-05-01), Lepiane
patent: 3573116 (1971-03-01), Cohen
patent: 3649387 (1972-03-01), Frentz et al.
patent: 3870576 (1975-03-01), Isitorsky et al.
patent: 4038111 (1977-07-01), Dumas

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