Technique for improving negative potential immunity of an...

Miscellaneous active electrical nonlinear devices – circuits – and – Signal converting – shaping – or generating – Current driver

Reexamination Certificate

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C327S427000, C257S358000

Reexamination Certificate

active

07436223

ABSTRACT:
An integrated circuit (IC) with negative potential protection includes a switch, a gate drive circuit and a comparator. The switch includes a double-diffused metal-oxide semiconductor (DMOS) cell formed in a first-type epitaxial pocket, which is formed in a second-type substrate. The switch also includes a second-type+ isolation ring formed in the substrate to isolate the first-type epitaxial pocket. An output of the gate drive circuit is coupled across a gate and a source of the switch. An output of the comparator is coupled to a second input of the gate drive circuit and a first input of the comparator receives a reference signal. A second input of the comparator is coupled to the epitaxial pocket. The comparator provides a turn-on signal that causes the switch to conduct current, when a signal at the second input of the comparator is below the reference signal.

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Gonnard o et al.: “Substrate current protection in smart power IC's ” 12th. international symposium on power semiconductor devices and IC S. ISPSD 2000. Proceedings. Toulouse, France, May 22-25, 2000, international symposium on power semiconductor devices & IC's, New York, NY: IEEE, US, May 22, 2000 (May 22, 2000), pp. 169-172, XP000987853 ISBN: 0-78036269-1 section II, 2ndparagraph.

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