Electricity: electrical systems and devices – Safety and protection of systems and devices – Transient responsive
Patent
1991-01-29
1993-12-21
DeBoer, Todd E.
Electricity: electrical systems and devices
Safety and protection of systems and devices
Transient responsive
361 58, 361 91, 257356, 257360, H02H 904
Patent
active
052725863
ABSTRACT:
Proper operation of an integrated circuit (IC) is destroyed when voltage exceeding a predetermined level is applied to the circuit. A switching MOS transistor utilizing floating gate technology is used to shunt electrostatic discharge (ESD) away from the IC. The switching MOS transistor is adapted to switch at a voltage level which is greater than the normal operating voltage for the IC but less than the predetermined voltage level characteristic of the IC. A first switching MOS transistor provides a path for a positive ESD stress by having its control gate and drain connected to the line of interest and its source connected to a reference point. Thus, when a positive voltage spike greater than the circuit voltages occurs on the line of interest, the first switching MOS transistor shunts the ESD stress away from the line of interest. A second switching MOS transistor provides a path for a negative ESD stress by having its control gate and drain connected to the reference point and its source connected to the line of interest. Thus, when a negative voltage spike greater than the circuit voltages occurs on the line of interest, the second switching MOS transistor shunts the ESD stress away from the line of interest.
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Deboer Todd E.
National Semiconductor Corporation
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