Technique for forming planarized gate structure

Details Technique for forming planarized gate structure Technique for forming planarized gate structure

1988-07-26

1989-04-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 63, 437186, 437233, 148DIG50, 148DIG86, 148DIG122, 148DIG131, 156640, 156643, 156651, 156644, 357 2311, 357 239, 357 49, 357 59, H01L 2122, H01L 21265

Patent

active

048187259

ABSTRACT:
A direct moat wafer processing for maximizing the functional continuity of a field oxide layer employs a processing sequence through which respective differently sized apertures are successively formed in the oxide layer. A first of these apertures prescribes the size of the polysilicon gate, while a second aperture is formed around the completed gate structure and prescribes the geometry of source/drain regions to be introduced into exposed surface areas of the substrate on either side of the gate. The sidewalls of the first and subsequently formed, second aperture are effectively perpendicular to the substrate surface, thereby maintaining the functional continuity of the field oxide layer across the entirety thereof. Thereafter, a separate gate interconnect layer is selectively formed atop the field oxide layer to provide a conductive path to the gate.

REFERENCES:
patent: 4354897 (1982-10-01), Nakajima
patent: 4356040 (1982-10-01), Fu et al.
patent: 4356623 (1982-11-01), Hunter
patent: 4371403 (1983-02-01), Ikubo et al.
patent: 4373965 (1983-02-01), Smigelski
patent: 4433468 (1984-02-01), Kawamata
patent: 4435896 (1984-03-01), Parillo et al.
patent: 4439270 (1984-03-01), Powell et al.
patent: 4512073 (1985-04-01), Hsa
patent: 4536943 (1984-08-01), Kakuma

Affiliated with

Also associated with

Rating

Technique for forming planarized gate structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique for forming planarized gate structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for forming planarized gate structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-180466