Technique for forming high-value inter-nodal coupling resistance

Details Technique for forming high-value inter-nodal coupling resistance Technique for forming high-value inter-nodal coupling resistance

1991-04-04

1992-08-04

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437200, 437918, 357 51, H01L 2170

Patent

active

051358824

ABSTRACT:
A technique for forming high-value, inter-nodal, polysilicon coupling resistors using self-aligned silicidation and local interconnect in a double polysilicon process. In an SRAM memory, the technique may be utilized to interconnect the gates of each CMOS invertor to created radiation-hardened cells. Process flow is conventional through gate formation, with transistor gates being patterned from a first polysilicon (poly-1) layer. The transistors which will form each invertor are constructed on distinct active areas. The gate of each invertor transistor extends beyond an edge of the field oxide region, such that an end portion of each gate is superjacent different portions of a single field oxide region. These gate end portions are separated by an expanse of exposed field oxide. The process then departs from convention with a blanket silicon nitride deposition, followed by blanket deposition of a second polysilicon (poly-2) layer. The poly-2 layer is then doped to a desired resistance, then patterned to create a resistive element for the local interconnect. Each invertor gate is connected to the resistive element during the normal flow of the local interconnect process. Preservation of the high resistance of the resistive element is maintained by means of a silicide-isolation oxide film which is created on all but the ends of the resistive element where interconnection to the invertor gates is made. By decoupling the function of the poly-1 and poly-2 layers, the problem of grain-boundary-assisted diffusion between heavily-doped and lightly-doped regions of a contiguous single-poly strip is eliminated. Hence, standard phosphine doping may be used for the poly-1 layer and blanket doping may be used for the poly-2 layer.

REFERENCES:
patent: 4451328 (1984-05-01), Dubois
patent: 4581815 (1986-04-01), Cheung et al.
patent: 4657628 (1987-04-01), Holloway et al.
patent: 4804636 (1989-02-01), Groover, III et al.
patent: 4968645 (1990-09-01), Baldi et al.

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