Technique for forming contacts for buried doped regions in a...

Details Technique for forming contacts for buried doped regions in a... Technique for forming contacts for buried doped regions in a...

2006-06-20

2006-06-20

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C370S447000, C370S902000

Reexamination Certificate

active

07064074

ABSTRACT:
A semiconductor device comprises an isolation trench and a contact trench that may contact a buried conductive region. The contact trench comprises insulating sidewall spacers that are formed during the filling of the isolation trench with an insulating material and the subsequent anisotropic etching of the excess material. Thereafter, the contact trench is filled with a conductive material. Thus, the formation of a contact for a buried region may be carried out simultaneously with the formation of a trench isolation structure, thereby minimizing the number of process steps required.

REFERENCES:
patent: 4256514 (1981-03-01), Pogge
patent: 5629238 (1997-05-01), Choi et al.
patent: 5872045 (1999-02-01), Lou et al.
patent: 6091154 (2000-07-01), Ohkawa
patent: 6096612 (2000-08-01), Houston
patent: 6479377 (2002-11-01), Tang et al.
patent: 6498372 (2002-12-01), Brown et al.

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