Technique for forming an isolation trench as a stress source...

Details Technique for forming an isolation trench as a stress source... Technique for forming an isolation trench as a stress source...

2006-09-25

2010-11-16

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S433000, C438S435000, C257SE21632, C257SE29242

Reexamination Certificate

active

07833874

ABSTRACT:
By forming a non-oxidizable liner in an isolation trench and selectively modifying the liner within the isolation trench, the stress characteristics of the isolation trench may be adjusted. In one embodiment, a high compressive stress may be obtained by treating the liner with an ion bombardment and subsequently exposing the device to an oxidizing ambient at elevated temperatures, thereby incorporating silicon dioxide into the non-oxidizable material. Hence, an increased compressive stress may be generated within the non-oxidizable layer.

REFERENCES:
patent: 2004/0087079 (2004-05-01), Chen et al.
patent: 2004/0212035 (2004-10-01), Yeo et al.
patent: 2005/0008790 (2005-01-01), Kapoor et al.
patent: 2005/0139949 (2005-06-01), Lee
patent: 2007/0015347 (2007-01-01), Mehta et al.
patent: 2007/0032039 (2007-02-01), Chen et al.
Taylor, S; Zhang, JF; Eccleston, W; “A review of the plasma oxidation of silicon and its application”, Semicond. Sci. Technol. 8 (1993) 1426-1433.

Affiliated with

Also associated with

Rating

Technique for forming an isolation trench as a stress source... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique for forming an isolation trench as a stress source..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for forming an isolation trench as a stress source... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4184572