Technique for fabricating phase shift masks using self-aligned s

Details Technique for fabricating phase shift masks using self-aligned s Technique for fabricating phase shift masks using self-aligned s

1998-09-28

2000-08-15

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

061034290

ABSTRACT:
A technique for fabricating a phase shift mask with multiple phase shifts by using self-aligned spacers to form phase shifting regions on a surface of a mask substrate. Three phase shifting regions are formed corresponding to 180.degree./120.degree./60.degree. phase shifts or delays on the surface of mask substrate. The three phase shifting regions are fabricated from three different dielectric materials, each having a different refractive indices. The first phase shifting region is formed by a photolithography technique, but the other two phase shifting regions are formed by the formation of self-aligned spacers. In an alternative technique, all three of the phase shifting regions are formed by the use of self-aligned spacers.

REFERENCES:
patent: 5308722 (1994-05-01), Nistler
patent: 5660955 (1997-08-01), Han
patent: 5827622 (1998-10-01), Coufal et al.
Marc D. Levenson, N.S. Viswanathan and Robert A. Simpson, Improving Resolution in Photolithography with a Phase-Shifting Mask, IEEE Transactions on Electron Devices, Dec. 1982, pp. 1828-1836, vol. Ed-29, No. 12.
H. Liu, C. Diaz, C. Chi, R. Kavari, P. Cheng, M. Cao, B. Gleason, B. Doyle, W. Greene and G. Ray, 100 cm CMOS Gates Patterened with 3.sigma. Below. 10 nm, SPIE, Feb. 1998, pp. 375-381, vol. 3331.

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