Technique for enhancing transistor performance by transistor...

Details Technique for enhancing transistor performance by transistor... Technique for enhancing transistor performance by transistor...

2011-06-21

2011-06-21

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S382000, C257SE29120, C257SE29122, C257SE29299, C257SE21641

Reexamination Certificate

active

07964970

ABSTRACT:
By locally adapting the size and/or density of a contact structure, for instance, within individual transistors or in a more global manner, the overall performance of advanced semiconductor devices may be increased. Hence, the mutual interaction between the contact structure and local device characteristics may be taken into consideration. On the other hand, a high degree of compatibility with conventional process strategies may be maintained.

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Official Communication Dated Jan. 8, 2008 for Application No. 102007020258.1-33.
PCT Search Report from PCT/US2008/004958 dated Jul. 16, 2008.

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