Technique for doping MOCVD grown crystalline materials using fre

Fishing – trapping – and vermin destroying

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437167, 437168, 437102, 437104, 437965, 156605, 148DIG110, H01L 2120, H01L 2136

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active

052022838

ABSTRACT:
Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials.

REFERENCES:
patent: 3218203 (1965-11-01), Ruehrwein
patent: 3249473 (1966-05-01), Holonyak, Jr.
patent: 3657004 (1972-04-01), Merkel et al.
patent: 3901746 (1975-08-01), Boucher
patent: 4368098 (1983-11-01), Manasevit
patent: 4404265 (1983-09-01), Manasevit
patent: 4566918 (1986-01-01), Irvine et al.
patent: 4650539 (1987-03-01), Irvine et al.
patent: 4782034 (1988-11-01), Dentai et al.
patent: 4904337 (1990-02-01), Elliott et al.
patent: 4904616 (1990-02-01), Bohline et al.

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