Technique for doping mercury cadmium telluride MOCVD grown cryst

Details Technique for doping mercury cadmium telluride MOCVD grown cryst Technique for doping mercury cadmium telluride MOCVD grown cryst

1991-02-19

1994-04-26

Chadhuri, Olik

Fishing, trapping, and vermin destroying

437168, 437965, 437971, 148DIG64, 156606, 156613, 156614, H01L 21365

Patent

active

053066600

ABSTRACT:
Method and apparatus for vapor phase free methyl radical transport of indium dopant species for precise predetermined reproducible doping concentrations to control electrical properties for MOCVD grown materials.

REFERENCES:
patent: 4368098 (1983-01-01), Manasevit
patent: 4404265 (1983-09-01), Manasevit
patent: 4422888 (1983-12-01), Statius
patent: 4439267 (1984-03-01), Jackson, Jr.
patent: 4504329 (1985-03-01), Quinlan et al.
patent: 4566918 (1986-01-01), Irvine et al.
patent: 4568397 (1986-02-01), Hoke et al.
patent: 4650539 (1987-03-01), Irvine et al.
patent: 4804638 (1989-02-01), Hoke et al.
patent: 4908329 (1990-03-01), Kanai et al.
patent: 4950621 (1990-08-01), Irvine et al.
patent: 4960728 (1990-10-01), Schaake et al.
patent: 5202283 (1993-04-01), Younger et al.
Hagihara et al. editors, Handbook of Organometallic Compounds, W. A. Benjamin Inc., 1968, p. 182.

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