Technique for doping from a polysilicon transfer layer

Details Technique for doping from a polysilicon transfer layer Technique for doping from a polysilicon transfer layer

1984-04-05

1986-02-11

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29576W, 29578, 148186, 148187, H01L 21385, H01L 21225

Patent

active

045697019

ABSTRACT:
For trench isolation technology or trench capacitor type memory cells, it is necessary to controllably dope the steep sidewalls of the trench. Implantation is ineffective and chemical doping sacrifices control.
A thin transfer layer of polysilicon is deposited in the trench to conformally coat the sidewalls as well as the bottom of the trench and the top surface surrounding the trench. An impurity is implanted into the polysilicon at the bottom of the trench and around the top surface. Upon heating that impurity diffuses rapidly along the polysilicon layer inwardly and downwardly along the sidewalls. It then may be diffused into the substrate. The polysilicon layer may be etched away, or may be oxidized to SiO.sub.2 and etched away, or left in place.

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IEEE Electron Device Letters, vol. EDL-4, No. 11, Nov. 1983, pp. 411-414, T. Morie, K. Minegishi and S. Nakajima, "Depletion Trench Capacitor Technology for Megabit Level MOS dRAM".

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