Technique for altering the profile of grating relief patterns

Coating processes – Optical element produced

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156600, 156643, 350 9630, 427 87, 427259, 427271, 430321, 430322, 430323, 430324, B05D 506

Patent

active

042411092

ABSTRACT:
An oblique shadow deposition technique for altering the profile of grating relief patterns on surfaces is described. In one aspect the technique essentially represents a method whereby a series of grating masks may be superimposed in precise registration with each other. By appropriate choice of deposition angle, deep grooves may be generated from shallow profiles, rounded or sinusoidal profiles may be transformed to structures with planar vertical walls, and symmetric profiles may be made asymmetric.

REFERENCES:
patent: 3211570 (1965-10-01), Salisbury
patent: 3865625 (1975-02-01), Cho et al.
patent: 3904462 (1975-09-01), Dimigen et al.
patent: 3930065 (1975-12-01), Baker et al.
patent: 4013465 (1977-03-01), Clapham et al.
patent: 4100313 (1978-07-01), Hammer et al.
patent: 4171234 (1979-10-01), Nagata et al.
Tsang et al., "Growth of GaAs-Gai-xAlxAs . . . ", Applied Physics Letters, vol. 30, No. 6, Mar. 1977.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Technique for altering the profile of grating relief patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Technique for altering the profile of grating relief patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Technique for altering the profile of grating relief patterns will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2243024

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.