Coating processes – Electrical product produced – Photoelectric
Patent
1979-10-11
1981-07-07
Hoffman, James R.
Coating processes
Electrical product produced
Photoelectric
B05D 136
Patent
active
042775159
ABSTRACT:
The target comprises a transparent substrate, an N-type transparent conductive film formed on the substrate, a P-type photoconductive film formed on the N-type conductive film and a heterojunction formed at the interface between the N- and P-type films. The P-type photoconductive film contains selenium, tellurium and arsenic of which selenium and arsenic are distributed continuously from the heterojunction throughout the thickness of the P-type photoconductive film whereas the distribution of tellurium is spaced from the heterojunction and localized in the vicinity of the heterojunction. The total amount of arsenic contained in the P-type photoconductive film ranges from 2.5 to 6% by weight.
REFERENCES:
patent: 3922579 (1975-11-01), Goto
patent: 4007395 (1977-02-01), Nonaka
patent: 4007473 (1977-02-01), Nonaka
Goto Naohiro
Nonaka Yasuhiko
Shidara Keiichi
Hitachi , Ltd.
Hoffman James R.
Nippon Hoso Kyokai
Pfund Charles E.
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