Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1989-06-08
1990-11-06
Kaplan, G. L.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
20419224, 20429813, 505731, 505736, C23C 1408, C23C 1434
Patent
active
049686658
ABSTRACT:
A target for forming a superconductive oxide film consists of 5 to 40% by volume of metallic copper and 60 to 95% by volume of an oxygen compound of barium and copper, strontium, calcium and copper, or barium, calcium and copper dispersed in the metallic copper, and the target is improved in thermal conductivity, electric resistivity and mechanical strength, because the metallic copper is large in those properties.
REFERENCES:
patent: 4866032 (1989-09-01), Fujimori et al.
Ken'ichi Kuroda et al., Japanese Journal of Applied Physics, vol. 28, No. 9, pp. 1586-1592, (1989).
Ohuchi Yukihiro
Sugihara Tadashi
Takeshita Takuo
Kaplan G. L.
Mitsubishi Metal Corporation
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