Target source for ion beam sputter deposition

Details Target source for ion beam sputter deposition Target source for ion beam sputter deposition

1988-04-25

1990-04-10

Nguyen, Nam X.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419211, 20429812, 20429813, C23C 1434

Patent

active

049158104

ABSTRACT:
A target for use in ion beam sputtering is arranged for varying the chemical composition of the deposited film without requiring substantial fabrication of a new target. The target is comprised of a disc having therein a plurality of openings which extend only part way through the disc. The target is fabricated from a predetermined chemical composition similar to that desired to be deposited. The openings within the target are filled with plugs of a varied chemical composition. By choice of the number of plugs and their composition, as well as the size of the plug, the structure of the film may readily be varied to a small degree or a large degree. The invention is applicable to all methods of deposition that use a target as a source of material for the film.

REFERENCES:
patent: 4248687 (1981-02-01), Fan
patent: 4250009 (1981-02-01), Cuomo et al.
patent: 4404263 (1983-09-01), Hodes et al.
patent: 4430190 (1984-02-01), Eilers et al.
C. Weissmantel, "Ion . . . Structures", J. Vac. Science Technol., 18(2), 3 (1981), pp. 179-185.
R. Castellano, "Ion . . . Targets", J. Vac. Sci. Technol., 17(2), 3/1980, pp. 629-633.
Reinhardt et al., "Electrical . . . Films", Thin Solid Film, 51 (1978), 99-104.

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