Target profile for sputtering apparatus

Details Target profile for sputtering apparatus Target profile for sputtering apparatus

1977-06-10

1978-07-11

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C23C 1500

Patent

active

041000552

ABSTRACT:
A planar diode sputtering source employs an anode and a generally concave cathode. The interior surfaces of the cathode include an outer portion providing a lip for protecting a surrounding cooling jacket from sputtering, a middle portion configured to optimize the average match between the surface thereof with a surrounding magnetic field for long useful life, and an inner portion. The middle and outer portion are faired together to minimize localized target erosion leading to premature target depletion or failure. The inner portion joins the middle portion with surface tangents meeting at an angle which minimizes local erosion at this juncture.

REFERENCES:
patent: 3895602 (1975-07-01), Bobenrieth
patent: 4041353 (1977-08-01), Penfold et al.
P. J. Clarke, "The S-Gun: A Direct Replacement for the Electron Beam Evaporator", Solid State Technology, Dec. 1976, pp. 77-79.

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