Target for transparent conductive thin film, transparent...

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Reexamination Certificate

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C428S918000, C252S520100, C252S521300

Reexamination Certificate

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10445708

ABSTRACT:
The target for the transparent conductive thin film having indium oxide as its major component and containing tungsten and/or molybdenum, obtained by forming a body of indium oxide powder, and tungsten oxide power and/or molybdenum oxide powder and then heating or sintering the formed body such that the thin film after sputtering has indium oxide as the main component and contains tungsten and/or molybdenum with an atomic ratio (W+Mo)/In of 0.0040 to 0.0470, whereby a transparent conductive thin film having excellent surface smoothness and low specific resistance of 6.0×10−4Ω·cm or less, and whose surface smoothness and specific resistance properties do not change even when heated at 170° C. is provided.

REFERENCES:
patent: 4640583 (1987-02-01), Hoshikawa et al.
patent: 5907382 (1999-05-01), Kajiura et al.
patent: 6534183 (2003-03-01), Inoue
patent: 6689477 (2004-02-01), Inoue
patent: 50-19125 (1975-07-01), None
patent: 10-162959 (1998-06-01), None
patent: WO0012445 (2000-03-01), None
patent: 2001-043980 (2001-02-01), None
patent: 2002-275623 (2002-09-01), None

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