Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1996-08-08
1998-06-09
Weisstuch, Aaron
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
75234, 20419229, 501134, 419 19, 419 31, 419 42, 419 49, C04B 3546, C23C 1434
Patent
active
057627681
ABSTRACT:
The targets for cathodic sputtering according to this invention are formed of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a minimum density of 95% of the theoretical density and with a sub-stoichiometric oxygen content are known. In order to provide the improvement of high stability and, simultaneously, high sputtering rate, it is proposed according to the invention that the target have a crystalline phase which is formed as a solid solution of indium oxide and tin oxide with a minimum of 90% by weight, preferably a minimum of 97%, of the solid solution, and which has an average grain size ranging from 2 .mu.m to 20 .mu.m. In order to make available a simple and cost-efficient method for producing a target consisting of a starting powder of indium oxide/tin oxide, which allows for a precise setting of the oxygen content and a homogeneous chemical composition throughout the entire target volume, it is proposed that a starting powder be used that is produced by oxidizing finely distributed indium tin metal.
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Patent Abstracts of Japan, vol. 014, No. 382 (1990) of JP-A-02 141459.
Patent Abstracts of Japan, vol. 012, No. 482 (1988) of JP-A-63 199862.
Patent Abstracts of Japan, vol. 017, No. 678 (1993) of JP-A-05 222526.
Bohmeier Hans
Goy Karl-Heinz
Lupton David Francis
Schielke Jorg
Scholz Friedhold
W.C. Heraeus GmbH
Weisstuch Aaron
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