Target for cathode discharging arc ion plating and method of...

Powder metallurgy processes – Powder metallurgy processes with heating or sintering – Heat and pressure simultaneously to effect sintering

Reexamination Certificate

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C419S049000

Reexamination Certificate

active

07144547

ABSTRACT:
In a target for cathode discharging arc ion plating containing Al and Cr as an essential ingredient according to the invention, the thickness of the Al and Cr compound layer formed between Cr particles and Al contained in a target is 30 μm or less. Alternatively, the total for the peak intensities of Al—Cr compound observed between diffraction angles between 10 to 80° by X-ray diffractiometry according to θ=2θ method is 10% or less relative to the total for the peak intensities of Al, Cr and the Al—Cr compound. Further, the relative density of the target is 92% or more. The target is capable of forming hard films of high quality while preventing not uniform movement of arc spots and suppressing formation of macro particles.

REFERENCES:
patent: 6517688 (2003-02-01), Sakurai et al.
patent: 6602390 (2003-08-01), Brandle et al.
patent: 102 33 222 (2003-02-01), None
patent: 1 219 723 (2002-07-01), None
patent: 2644710 (1997-05-01), None
patent: 10-60636 (1998-03-01), None
Patent Abstracts of Japan, JP 10-060636, Mar. 3, 1998.
Patent Abstracts of Japan, JP 2000-297365, Oct. 24, 2000.

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