Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1983-08-22
1984-08-14
Mayewsky, Volodymyr
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 20, 357 48, 357 36, 307303, 338309, H01L 2702
Patent
active
044660138
ABSTRACT:
The invention relates to an integrated resistor formed in an epitaxial layer and provided with at least one tap. In order to reduce field effect action between the resistor and the epitaxial layer, the voltage on the two ends of the epitaxial layer underneath the resistor tracks the voltage on the two ends of the resistor. Moreover, the epitaxial layer is short-circuited by means of buried layers at the locations where the resistance layer also exhibits a short-circuit, such as underneath the contact area of the tap.
REFERENCES:
patent: 3700977 (1972-10-01), Lunn
patent: 3702955 (1972-11-01), Kalb et al.
patent: 3740621 (1973-06-01), Carley
patent: 4001762 (1977-01-01), Aoki et al.
patent: 4131809 (1978-12-01), Baars
patent: 4258380 (1981-03-01), Roger
patent: 4270137 (1981-05-01), Coe
patent: 4272776 (1981-06-01), Weijland et al.
patent: 4291326 (1981-09-01), Higuchi et al.
Dijkmans Eise C.
van de Plassche Rudy J.
Biren Steven R.
Mayer Robert T.
Mayewsky Volodymyr
U.S. Philips Corporation
LandOfFree
Tapped integrated resistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Tapped integrated resistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tapped integrated resistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-116813