Tapped integrated resistor

Details Tapped integrated resistor Tapped integrated resistor

1983-08-22

1984-08-14

Mayewsky, Volodymyr

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 20, 357 48, 357 36, 307303, 338309, H01L 2702

Patent

active

044660138

ABSTRACT:
The invention relates to an integrated resistor formed in an epitaxial layer and provided with at least one tap. In order to reduce field effect action between the resistor and the epitaxial layer, the voltage on the two ends of the epitaxial layer underneath the resistor tracks the voltage on the two ends of the resistor. Moreover, the epitaxial layer is short-circuited by means of buried layers at the locations where the resistance layer also exhibits a short-circuit, such as underneath the contact area of the tap.

REFERENCES:
patent: 3700977 (1972-10-01), Lunn
patent: 3702955 (1972-11-01), Kalb et al.
patent: 3740621 (1973-06-01), Carley
patent: 4001762 (1977-01-01), Aoki et al.
patent: 4131809 (1978-12-01), Baars
patent: 4258380 (1981-03-01), Roger
patent: 4270137 (1981-05-01), Coe
patent: 4272776 (1981-06-01), Weijland et al.
patent: 4291326 (1981-09-01), Higuchi et al.

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