Tapered stripe semiconductor laser

Details Tapered stripe semiconductor laser Tapered stripe semiconductor laser

1980-07-22

1982-09-14

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

043499058

ABSTRACT:
A stripe semiconductor laser is provided in which the active stripe region is tapered in width. Tapering permits high power operation and a low current density threshold for lasing, while preventing oscillation in unwanted lateral modes.

REFERENCES:
patent: 4251780 (1981-02-01), Scifres et al.
Kawaguch et al., "Planar Stripe with Waist and/or Notch (SWAN) Injection Laser," IEEE Journal of Quantum Electronics, vol. QE-16, No. 1, Jan. 1980, pp. 78-84.
Yonezu et al., "High Optical Power Density Emission from a "Window-Stripe" AlGaSa Double-Heterostructure Laser", Appl. Phys. Lett. 34(10), 15 May 1979, pp. 637-639.
Burns et al., "Optical Waveguide Parabolic Coupling Horns", Appl. Phys. Lett. vol. 30 No. 1, 1 Jan. 1977, pp. 28-30.

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