Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-11-06
2007-11-06
Williams, Alexander Oscar (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23152, C257SE23144, C257SE23167, C257SE27141, C257S773000, C257S644000, C257S665000, C257S776000
Reexamination Certificate
active
10627334
ABSTRACT:
In an integrated circuit, a layer including a plurality of conductive wires is described. A first wire, having sidewalls, is tapered from a proximal end which has a first width to a distal end which has a second width, to reduce width from the first width to the second width, and the first wire also has a substantially vertical surface. A second wire, spaced apart from the first wire, also has a substantially vertical surface. The first wire and the second wire are each horizontally disposed along side each other forming a part of a sidewall capacitor between facing sidewalls. Capacitors are created between the first substantially vertical surface and the second substantially vertical surface, the capacitors are respectively associated with capacitances and with a plurality of loads, the plurality of loads is progressively reduced responsive to a progressive reduction of the capacitances as associated with the first wire taper.
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Alfke Peter H.
Lesea Austin H.
Hardaway Michael R.
Webostad W. Eric
Williams Alexander Oscar
Xilinx , Inc.
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