Tapered semiconductor laser gain structure with cavity spoiling

Details Tapered semiconductor laser gain structure with cavity spoiling Tapered semiconductor laser gain structure with cavity spoiling

1993-11-08

1995-03-21

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 19, 372 45, 372 50, 372 99, H01S 319

Patent

active

054003539

ABSTRACT:
A semiconductor laser gain structure having a tapered gain region comprising cavity spoilers for receiving light which is reflected off of the output facet back into the semiconductor and removing it from the gain region so as to reduce or eliminate self-oscillation. The boundaries of the gain region are also designed to have a very low refractive index gradient so as to minimize reflection of light off of the boundaries back into the gain region. The gain structure may be embodied in a semiconductor laser oscillator or semiconductor laser amplifier depending on whether the input facet is or is not, respectively, anti-reflection coated. The output facet is anti-reflection coated in either embodiment.

REFERENCES:
patent: 4713821 (1987-12-01), Bradford et al.
patent: 4744089 (1988-05-01), Montroll et al.
patent: 5179568 (1993-01-01), Lang
High-Power and Fundamental-Mode Oscillating Flared SBA Lasers K. Shigihara, T. Aoyagi, S. Hinata, Y. Nagai, Y. Mihashi, Y. Seiwa K. Ikeda and W. Susaki, Electronics Letters, Sep. 01, 1988, vol.24 No. 18, pp. 1182-1183.
A gaInAsP/InP Tapered-Waveguide Semiconductor Laser Amplifier Integrated with a 1.5.mu.m Distributed Feedbak Laser, P. A. Yazaki, K. Komori, G. Bendelli, S. Arai and Y. Suematsu, IEEE Transactions Photonics Technology Letters, vol. 3, No. 12, Dec. 1991 pp.1060-1063.
A New Structure for High-Power TW-SLA , G. Bendelli, K. Komori, S. Arai and Y. Suematsu, IEEE Photonics Technology Letters, vol. 3 No. 1, Jan. 1991, pp. 42-44.

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