Tapered electrode for stacked capacitors

Details Tapered electrode for stacked capacitors Tapered electrode for stacked capacitors

1998-07-28

2000-12-26

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438253, 438640, 438673, 438713, H01L 2120

Patent

active

061658642

ABSTRACT:
A method for forming a stacked capacitor includes the steps of providing a first insulating layer having a conductive access path therethrough, forming a second insulating layer on the first insulating layer, forming a trench in the second insulating layer, the trench having tapered sidewalls, forming a first electrode in the trench and on the trench sidewalls, the first electrode being electrically coupled to the conductive access path, forming a dielectric layer on the first electrode and forming a second electrode on the dielectric layer. A stacked capacitor having increased surface area includes a first electrode formed in a trench provided in a dielectric material. The first electrode has tapered surfaces forming a conically shaped portion of the first electrode, the first electrode for accessing a capacitively coupled storage node.

REFERENCES:
patent: 5012309 (1991-04-01), Nakayama
patent: 5307310 (1994-04-01), Narita
patent: 5691219 (1997-11-01), Kawakubo
patent: 5843845 (1998-12-01), Chung
patent: 5973347 (1999-10-01), Nagatomo

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