Tapered beam expander waveguide integrated with a diode lasesr

Details Tapered beam expander waveguide integrated with a diode lasesr Tapered beam expander waveguide integrated with a diode lasesr

1996-05-01

1998-02-24

Powell, William

Etching a substrate: processes

Forming or treating optical article

216 2, 216 41, H01L 2100

Patent

active

057208930

ABSTRACT:
The present invention is directed to a semiconductor waveguiding structure which includes a) a first semiconductor waveguiding layer formed on a substrate, b) a barrier layer that is formed on the first semiconductor waveguiding layer, and that is resistant to a selected etchant, and c) a second semiconductor waveguiding layer that is etched using the selected etchant such that its width is tapered along its length to a pointed edge. A separate etching of the first semiconductor layer is performed to form each sidewall of the first semiconductor layer. The intersection of those sidewalls defines the pointed edge which has a radius of curvature of less than 500 Angstroms.

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R. Zengerle et al., "Low-Loss Fibre-Chip Coupling by Buried Laterally Tapered InP/InGaAsP Waveguide Structure," Electronics Letters, vol. 28, No. 7, Mar. 26, 1992. Technological background of the invention.
T. L. Koch et al., "Semiconductor Photonic Integrated Circuits," IEEE Journal of Quantum Electronics, vol. 27, No. 3, Mar. 1991, pp. 641-645. Technological background of the invention.
M. Chein et al., "Short-Cavity Distributed Bragg Reflector Laser with an Integrated Tapered Output Waveguide," IEEE Photonics Technology Letters, vol. 3, No. 5, May 1991, pp. 418-420. Technological background of the invention.
U. Koren et al., "Tapered Waveguide InGaAs/InGaAsP Multiple-Quantum-Well Lasers," IEEE Photonics Technology Letters, vol. 2, No. 2, Feb. 1990, pp. 88-90. Cited by Examiner in parent application.
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