Tantalum sputtering target and method for preparation thereof

Metal treatment – Stock – Vanadium – niobum – or tantalum base

Reexamination Certificate

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Details

C148S668000, C204S298120, C204S298130

Reexamination Certificate

active

07740717

ABSTRACT:
Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, and thereafter rolling, a tantalum ingot or billet having been subject to melting and casting, and forming a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target. As a result, evenness (uniformity) of the film is enhanced, and quality of the sputter deposition is improved.

REFERENCES:
patent: 4994118 (1991-02-01), Pircher et al.
patent: 6193821 (2001-02-01), Zhang
patent: 6197134 (2001-03-01), Kanzaki et al.
patent: 6323055 (2001-11-01), Rosenberg et al.
patent: 6331233 (2001-12-01), Turner
patent: 6348113 (2002-02-01), Michaluk et al.
patent: 6348139 (2002-02-01), Shah et al.
patent: 6759143 (2004-07-01), Oda et al.
patent: 6770154 (2004-08-01), Koenigsmann et al.
patent: 6893513 (2005-05-01), Michaluk et al.
patent: 7156963 (2007-01-01), Oda
patent: 2002/0063056 (2002-05-01), Shah et al.
patent: 2003/0089429 (2003-05-01), Koenigsmann et al.
patent: 2005/0268999 (2005-12-01), Oda
patent: 2007/0023281 (2007-02-01), Oda
patent: 2007/0062807 (2007-03-01), Oda
patent: 2007/0102288 (2007-05-01), Oda et al.
patent: 0902102 (1999-03-01), None
patent: 99/66100 (1999-12-01), None
English Abstract of JP 2001-271161 A, Oct. 2, 2001.
English Abstract of JP 2000-323433 A, Nov. 24, 2000.
English Abstract of JP 2000-239835 A, Sep. 5, 2000.
English Abstract of JP 2002-363736 A, Dec. 18, 2002.
English Abstract of JP 09-104972 A, Apr. 22, 1997.
English Abstract of JP 2002-363662 A, Dec. 18, 2002.
Michaluk et al., “Tantalum 101: Economics and Technology of Ta Materials”, Semiconductor International, pp. 271-278, Jul. 2000.
Unpublished Co-pending U.S. Appl. No. 11/912,450.
Patent Abstracts of Japan, one page English Abstract of JP 06-264232, Sep. 1994.
Patent Abstracts of Japan, one page English Abstract of JP 01-215426, Aug. 1989.
Patent Abstracts of Japan, one page English Abstract of JP 61-124566, Jun. 1986.
Patent Abstracts of Japan, one page English Abstract of JP 2000-323434, Nov. 2000.

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