Tantalum sputtering target and method for preparation thereof

Details Tantalum sputtering target and method for preparation thereof Tantalum sputtering target and method for preparation thereof

2007-01-02

2007-01-02

King, Roy (Department: 1742)

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

C204S298130, C148S668000

Reexamination Certificate

active

10514955

ABSTRACT:
Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, and thereafter rolling, a tantalum ingot or billet having been subject to melting and casting, and forming a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target. As a result, evenness (uniformity) of the film is enhanced, and quality of the sputter deposition is improved.

REFERENCES:
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patent: 6348113 (2002-02-01), Michaluk et al.
patent: 6348139 (2002-02-01), Shah et al.
patent: 2003/0089429 (2003-05-01), Koenigsmann et al.
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Patent Abstracts of Japan, 1 page English Abstract of JP 01-215426, Aug. 1989.
Patent Abstracts of Japan, 1 page English Abstract of JP 61-124566, Jun. 1986.
Patent Abstracts of Japan, 1 page English Abstract of JP 2000-323434, Nov. 2000.

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