Tantalum semiconductor contacts and method for fabricating same

Details Tantalum semiconductor contacts and method for fabricating same Tantalum semiconductor contacts and method for fabricating same

1978-09-08

1980-07-22

James, Andrew J.

357 15, 357 67, H01L 2348, H01L 2946, H01L 2954

Patent

active

042142563

ABSTRACT:
A silicon semiconductor device having contacts which include tantalum. The tantalum is useful in particular for fabricating Schottky barrier diodes having a low barrier height. The method includes: precleaning the silicon substrate prior to depositing the tantalum; depositing the tantalum at low pressure and low substrate temperature to avoid oxidation of the tantalum; and sintering the contact to reduce any interfacial charges and films remaining between the silicon and tantalum. When a metal which reacts with silicon during processing, such as aluminum, is used as interconnection metallurgy, a layer of chrome must be deposited between the tantalum and aluminum.

REFERENCES:
patent: 3633076 (1972-01-01), Arndt
patent: 3806778 (1974-04-01), Shimakura et al.
patent: 3813762 (1974-06-01), Kniepkamp
patent: 3906540 (1975-09-01), Hollins
patent: 4034394 (1977-07-01), Kamo et al.
patent: 4107726 (1978-08-01), Schilling
patent: 4141020 (1979-02-01), Howard et al.
patent: 4146413 (1979-03-01), Yonezawa et al.
IBM Technical Disclosure Bulletin, vol. 16, No. 11, Apr., 1974 by Reith et al. Al/pts: Schottky Barrier Diodes, p. 3586.
IBM Technical Disclosure Bulletin, vol. 17 No. 10 Mar., 1975 by Gani, et al., Logic Circuit--Diodes, p. 2856.

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