Tantalum-gallium arsenide Schottky barrier semiconductor device

Details Tantalum-gallium arsenide Schottky barrier semiconductor device Tantalum-gallium arsenide Schottky barrier semiconductor device

1976-04-28

1978-07-04

Kendall, Ralph S.

Coating processes

Electrical product produced

Welding electrode

427 82, 427 84, 148 614R, 357 52, 357 15, H01C 700, H01G 900

Patent

active

040989216

ABSTRACT:
A Schottky barrier semiconductor device wherein the semiconductor is gallium arsenide and the metal electrode is tantalum, passivated by formation of native oxides after the metal-semiconductor junction is made. Tantalum acts as a diffusion shield, enabling use of gold as a direct contact on the electrode.

REFERENCES:
patent: 3896254 (1975-07-01), Berkner
patent: 3914465 (1975-10-01), Dyment
patent: 3923975 (1975-12-01), Calviello

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