Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1994-11-29
1996-04-16
Nazario-Gonzales, Porfirio
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272481, 556 42, 556 43, C23C 1600, C07F 900
Patent
active
055080634
ABSTRACT:
A novel tantalum compound represented by the formula (1): Ta(CH.sub.3).sub.3 (OR).sub.2, wherein R is an alkyl group having from 2 to 7 carbon atoms. The novel tantalum compound is produced by reacting a haloalkoxytantalum compound represented by the formula (2): TaX.sub.n (OR).sub.5-n, wherein X is halogen, R is an alkyl group having from 2 to 7 carbon atoms, and n is an integer of from 0 to 4, with a methylmetal compound; and recovering the tantalum compound represented by the above formula (1) by reduced pressure distillation. The tantalum compound has a high vapor pressure and permits effective formation of a uniform film of tantalum oxide with good properties by a CVD method. Therefore, the tantalum compound is very useful for manufacturing semiconductor devices.
REFERENCES:
Chamberlain et al., Organometallics, vol. 1, No. 8, pp. 1098-1100 (1982).
R. N. Kapoor, et al., Indian J. Chem., vol. 5, pp. 442-443 (1967).
D. C. Bradley, et al., J. Chem. Soc., pp. 726-728 (1955).
Thomas Kauffmann, et al., Tetrahedron Letters, vol. 23, No. 22, pp. 2301-2304 (1982).
Mori Hideyuki
Nakamura Kouichi
Suzuki Toshiyuki
Japan Energy Corporation
Nazario-Gonzales Porfirio
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