Tantalum CMP compositions and methods

Details Tantalum CMP compositions and methods Tantalum CMP compositions and methods

2011-08-16

2011-08-16

Green, Anthony J (Department: 1731)

Abrasive tool making process, material, or composition

With inorganic material

C051S309000, C106S003000

Reexamination Certificate

active

07998228

ABSTRACT:
A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises about 0.1 to about 10 percent by weight of a zirconia or fumed alumina abrasive, about 0.1 to about 10 percent by weight of an alkali metal iodate salt and an aqueous carrier. The composition has a pH of at least about 10. The composition is utilized to polish a surface of a tantalum-containing substrate.

REFERENCES:
patent: 5527423 (1996-06-01), Neville et al.
patent: 6976905 (2005-12-01), Fang et al.
patent: 2001/0013506 (2001-08-01), Chamberlin et al.
patent: 2005/0005525 (2005-01-01), Li et al.
Kuiry, et al., “Effect of pH and H2O2 on Ta Chemical Mechanical Planarization” Journal of the Electrochemical Society, vol. 150 (1), pp. C36-C43 (2003).
Li, et al., “Chemical Mechanical Polishing of Copper and Tantalum in Potassium Iodate-Based Slurries,” Electrochemical and Solid-State Letters, vol. 4(2), pp. G20-G22 (2001).

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