Coating processes – Electrical product produced – Condenser or capacitor
Patent
1995-03-07
1997-04-22
Beck, Shrive
Coating processes
Electrical product produced
Condenser or capacitor
427 80, 427 81, 29 2503, 29 2542, 361529, B05D 512, H01G 700
Patent
active
056227469
ABSTRACT:
The present invention provides a manganese nitrate coating having high conductivity and solid tantalum anode capacitors having low ESR by using an oven atmosphere which effectively treats all of the anodes in the oven. The manganese nitrate coating of the present invention is produced under highly oxidizing conditions by providing one or more oxidizing agents more active than nitrogen dioxide in the atmosphere of the oven during pyrolysis of manganese nitrate. The oxidizing agents include nitric acid, hydrogen peroxide, ozone, and mixtures thereof.
REFERENCES:
patent: 3217381 (1965-11-01), Wessling
patent: 3301704 (1967-01-01), Zind
patent: 3302074 (1967-01-01), Black
patent: 3337429 (1967-08-01), Zind
patent: 3397446 (1968-08-01), Sharp
patent: 3458775 (1969-07-01), Flaks et al.
patent: 3502949 (1970-03-01), Seiki
patent: 4038159 (1977-07-01), Nishino et al.
patent: 4042420 (1977-08-01), Nishino et al.
patent: 4105513 (1978-08-01), Nishino et al.
patent: 4148131 (1979-04-01), Nishino et al.
patent: 4164455 (1979-08-01), Aronson et al.
patent: 4269691 (1981-05-01), Deborski
patent: 4302301 (1981-11-01), Tierman
patent: 4652463 (1987-03-01), Peters
patent: 4984342 (1991-01-01), Auer et al.
patent: 5120423 (1992-06-01), Kurita et al.
patent: 5184286 (1993-02-01), Lauf et al.
patent: 5227016 (1993-07-01), Carlson et al.
The Condensed Chemical Dictionary, pp. 545, 729 and 769.
Klose, "Electrical Properties of Manganese Dioxide and Manganese Sesquioxide," J. Electrochem. Soc.: Electrochemical Science, 117(7):854-858.
Nishino et al., "Manganese Dioxide Symposium", 1980, Tokyo (published by Electrochemical Society, 1981), pp. 305-320.
Hahn Randolph S.
Henley, Jr. John D.
Kinard John T.
Melody Brian J.
Piper John
Beck Shrive
Kemet Electronics Corporation
Talbot Brian K.
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