Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2007-09-24
2010-11-23
Thomas, Eric (Department: 2831)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C361S528000
Reexamination Certificate
active
07837743
ABSTRACT:
A high voltage capacitor anode for an implantable medical device is fabricated by sintering, anodizing and heat treating a pressed tantalum powder slug. The sintering may be performed at a temperature between approximately 1500° C. and approximately 1600° C. for a time between approximately 3 minutes and approximately 35 minutes; subsequent anodization may be performed by immersing the slug in an electrolyte at a temperature between approximately 15° C. and approximately 30° C. and then applying a voltage across the slug, the voltage being between approximately 175 Volts and approximately 375 Volts; subsequent heat treating may be performed at a temperature between approximately 400° C. and approximately 460° C. for a time between approximately 50 minutes and approximately 65 minutes. Following heat treating, the anode is reformed by a second anodization.
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Casby Kurt J.
Gaffney Kevin M.
Hossick-Schott Joachim
Hulting Karen J
Norton John D.
Medtronic Inc.
Thomas Eric
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