Tantalum and niobium compounds and their use for chemical...

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Reexamination Certificate

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C427S123000, C548S101000

Reexamination Certificate

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07442407

ABSTRACT:
Tantalum and niobium compounds having the general formula (I) and their use for the chemical vapour deposition process are described:whereinM stands for Nb or Ta,R1and R2C1to C12alkyl, C5to C12cycloalkyl, C6to C10aryl radicals, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl radicals —SiR3, or amino radicals NR2R3is C1to C8alkyl, C5to C10cycloalkyl, C6to C14aryl radical, or SiR3or NR2,R4denotes Cl, Br, I, NIH—R5where R5is C1to C8alkyl, C5to C10cycloalkyl or C6to C10aryl radical, or O—R6where R6=optionally substituted C1to C11alkyl, C5to C10cycloalkyl, C6to C10aryl radical, or —SiR3, or BH4, or an allyl radical, or an indenyl radical, or an benzyl radical, or an cyclopentadienyl radical, or —NIR—NR′R″ (hydrazido(-1), wherein R, R′ and R″ have the aforementioned meaning of R, or CH2SiMe3, pseudohalide, or silylamide —N(SiMe3)2, andR7and R8are H, C1to C12alkyl, C5to C12cycloalkyl or C6to C10aryl radicals.

REFERENCES:
patent: 6593484 (2003-07-01), Yasuhara et al.
patent: 2004/0142555 (2004-07-01), Kamepalli et al.
patent: WO-00/65123 (2000-11-01), None
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Tsai et al., “Metalorganic chemical vapor deposition of tantalum nitride by tertbutylimidotris(diethylamido)tantalum for advanced metallization,” Appl. Phys. Lett. vol. 67, No. 8, Aug. 21, 1995 (pp. 1128-1130).
Chiu et al., “Deposition of tantalum nitride thin films from ethylimidotantalum complex,” Journal of Materials Science Letters, 11, 1992 (pp. 96-98).
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Bleau et al., “Molecular precursors for the CVD of niobium and tantalum nitride,” Polyhedron, vol. 24, 2005 (pp. 463-468).
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