Tantalum amide precursors for deposition of tantalum nitride on

Details Tantalum amide precursors for deposition of tantalum nitride on Tantalum amide precursors for deposition of tantalum nitride on

1998-01-23

2000-01-18

Nazario-Gonzalez, Porfirio

Organic compounds -- part of the class 532-570 series

Organic compounds

Heavy metal containing

556 28, 556 42, 556 43, 4272481, C07F 900, C07F 728, C07F 1900

Patent

active

060159170

ABSTRACT:
Tantalum and titanium source reagents are described, including tantalum amide and tantalum silicon nitride precursors for the deposition of tantalum nitride material on a substrate by processes such as chemical vapor deposition, assisted chemical vapor deposition, ion implantation, molecular beam epitaxy and rapid thermal processing. The precursors may be employed to form diffusion barrier layers on microlectronic device structures enabling the use of copper metallization and ferroelectric thin films in device construction.

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