Tantalum-aluminum-nitrogen material for semiconductor devices

Details Tantalum-aluminum-nitrogen material for semiconductor devices Tantalum-aluminum-nitrogen material for semiconductor devices

1996-06-10

1999-04-06

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257752, 257753, H01L 2348, H01L 2352, H01L 2940

Patent

active

058922814

ABSTRACT:
Ta-Al-N is formed on a semiconductor device structure, such as a wiring line, to prevent interdiffusion between surrounding layers. The Ta-Al-N material serves as a diffusion between (i) two conductor layers, (ii) a semiconductor layer and a conductor layer, (iii) an insulator layer and a conductor layer, (iv) an insulator layer and a semiconductor layer, or (v) two semiconductor layers. Another use is to promote adhesion with adjacent layers, such as between (i) two conductor layers, (ii) a conductor layer and an insulator layer, (iii) a semiconductor layer and a conductor layer, or (iv) two semiconductor layers. The Ta-Al-N material also is used to form a contact or electrode. The Ta-Al-N material includes between 0.5% and 99.0% aluminum, between 0.5% and 99.0% tantalum, and between 0.5% and 99.0% nitrogen. The Ta-Al-N layer has a thickness between 50 angstroms and 6000 angstroms, and as part of a wiring line structure, has a thickness which is between 1% and 25% of the wiring line structure thickness.

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