Tandem deposition of cermets

Details Tandem deposition of cermets Tandem deposition of cermets

1985-02-28

1986-05-27

Childs, Sadie L.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

204192SP, 204192D, 427 38, 427 451, 4272481, 427250, 427255, C23C 1434

Patent

active

045914176

ABSTRACT:
A metal and an insulator are alternately deposited on a substrate. The alternate deposition is continued until the desired film thickness of the cermet is obtained, at least one of the metal or insulator materials being deposited in sufficiently small quantities so that only a discontinuous film of that material is formed during a deposition. The metal insulator composition of the cermet is controlled by the relative deposition rates of the insulator metal. The metal particle size is controlled by the duration of each metal deposition.

REFERENCES:
patent: 3308528 (1967-03-01), Bullard et al.
patent: 3363998 (1968-01-01), Keister et al.
patent: 3462723 (1969-08-01), Phillips
patent: 3586614 (1971-06-01), Boggs et al.
patent: 4013830 (1977-03-01), Pinch et al.
patent: 4021277 (1977-05-01), Shirn et al.
patent: 4312915 (1982-01-01), Fan
patent: 4317850 (1982-03-01), Verburgh et al.
patent: 4465577 (1984-08-01), Tanielian
Hanak et al., "Calculation of Deposition Profiles & Compositional Analysis of Cosputtered Film", Applied Physics, pp. 1666-1673, 1972.

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