Dynamic information storage or retrieval – Specific detail of information handling portion of system – Radiation beam modification of or by storage medium
Patent
1982-01-05
1985-12-31
Psitos, Aristotelis M.
Dynamic information storage or retrieval
Specific detail of information handling portion of system
Radiation beam modification of or by storage medium
369120, 369109, 372 46, 372 50, G11B 700, H01S 319
Patent
active
045625697
ABSTRACT:
A two-segment contact buried heterostructure (BH) laser is pumped by a current applied to its absorber contact from a source of high impedance on the order of 100K.OMEGA. or more. The parasitic resistance between the absorber contact and the gain contact is high on the order of 10K.OMEGA.. For a given absorber (bias) current the laser exhibits a relatively wide hysteresis on the order of 1 mA or more in the light vs. gain contact current. Such a laser is highly useful as a bistable optical element. The laser is also bistable with selected pump gain and absorber currents to exhibit a wide hysteresis of voltage across the absorber contact vs. relative amounts of light which is reflected back to the laser as feedback. The laser serve both as a light source and as a detector for reading out binary information stored as light reflective spots on a medium, e.g. a video disk.
REFERENCES:
patent: 3427563 (1969-02-01), Lasher
patent: 3504302 (1970-03-01), Fenner
patent: 3812477 (1974-05-01), Wieder
patent: 3941945 (1976-03-01), Borner et al.
patent: 4005259 (1977-01-01), Kaneko
patent: 4055815 (1977-10-01), Smith
"Buried Heterostructure AlGaAs Lasers on Semi-Insulating Substrates", Bar-Chaim et al., Electronics Letters, (Feb. 5, 1981), vol. 17, No. 3, pp. 108-109.
Repetitively Q-Switched Light Pulses from GaAs Injection Lasers with Tandem Double-Section Strip Geometry: Roldan et al.; IEEE Journal of Quantum Electronics, vol. QE-6, No. 6, Jun. 1970, pp. 339-352.
A Densely Packed Monolithic Linear Array of GaAs-Al.sub.x Ga.sub.1-x As Strip Buried Heterostructure Laser; Tsang et al., Appl. Phys. Lett. 34(2), Jan. 15, 1979.
Monolithic Integration of a GaAlAs Injection Laser with a Schottky-Gate FET., App. Physc. Lett., vol. 36, No. 3, Feb. 1, 1980.
Single-Wavelength Operation of 1.53 .mu.m GaInAsP/InP Buried Heterostructure Integrated Twin Guide Laser . . . ; Kobayashi et al., Electronics Letters, (May, 28, 1981), vol. 17, No. 11, pp. 368-369.
Harder Christoph
Lau Kam-Yin
Yariv Amnon
California Institute of Technology
Psitos Aristotelis M.
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