TaN/NiFe/TaN anisotropic magnetic sensor element

Details TaN/NiFe/TaN anisotropic magnetic sensor element TaN/NiFe/TaN anisotropic magnetic sensor element

1995-09-13

1997-09-16

Ryan, Patrick

Stock material or miscellaneous articles

Structurally defined web or sheet

Discontinuous or differential coating, impregnation or bond

428901, 360113, 324252, B32B 900

Patent

active

056678797

ABSTRACT:
A stack of two refractory nitride layers and a magnetoresistive layer are used to facilitate electrical connection between components of a sensor. The stack of tantalum nitride and nickel iron layers are disposed over a silicide layer that is, in turn, disposed on a diffusion of conductive material within the body of a silicon layer. A titanium tungsten layer is disposed on the stack and below a subsequent layer of a conductive metal such as aluminum. A silicon nitride passivation layer is disposed over all of the other layers.

REFERENCES:
patent: 5005064 (1991-04-01), Yoshino et al.
patent: 5140549 (1992-08-01), Fryer
patent: 5308792 (1994-05-01), Okabayashi
patent: 5489548 (1996-02-01), Nishioka
patent: 5514822 (1996-05-01), Scott
Tipler, Physics 2nd Ed. p. 802.

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