Tailored field in multigate FETS

Details Tailored field in multigate FETS Tailored field in multigate FETS

1998-05-08

2000-03-14

Lam, Tuan T.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Utilizing three or more electrode solid-state device

327434, H03K 17785

Patent

active

060378301

ABSTRACT:
A uniform tailored electrical field in a multigate field effect D-mode transistor is automatically provided by a feedback circuit which couples drain bias voltages to the gates of a multigate transistor to bias the gates incrementally such that the highest voltage is applied to the gate nearest the drain while the lowest voltage is applied to the gate nearest the source. E-mode multigate FET's carry higher gate voltage on the gate close to the source compared to a gate voltage on a last gate, located close to the drain. The proper distribution of gate voltages improves the transconductance G.sub.m of the transistor and decreases gate capacitance C.sub.gs, which increases the speed of operation of a multigate FETs.

REFERENCES:
patent: 3772614 (1973-11-01), Kjaersgaard
patent: 3831111 (1974-08-01), Lafferty
patent: 4264981 (1981-04-01), Vilimek
patent: 4700461 (1987-10-01), Choi et al.
P. Muzumdar, et al. "Improved Performance of a Field Effect Transistor," Superlattices and Microstructures, 8 (4): 357-359 (1990).
P. Muzumdar, et al. "Observation of negative differential resistance in GaAs field-effect transistors" J. Appl. Phys. 70 (2): 1063-1065 (Jul. 15, 1991).

Affiliated with

Also associated with

Rating

Tailored field in multigate FETS does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Tailored field in multigate FETS, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Tailored field in multigate FETS will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-173256