Tablecloth memory matrix with staggered EPROM cells

Static information storage and retrieval – Magnetic bubbles – Guide structure

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Details

357 45, 365185, H01L 2978

Patent

active

050050605

ABSTRACT:
The memory matrix comprises parallel and alternating source and drain lines, floating gate areas placed between the source and drain lines and control gate lines parallel to each other and perpendicular to the source and drain lines superimposed on the floating gate areas. The floating gate areas are arranged in rows parallel to the source and drain lines in positions longitudinally staggered in relation to those of the adjacent row in such a manner that the floating gate areas of one row underlie a first plurality of control gate lines and the floating gate areas of the adjacent row underlie a second plurality alternating with the first of the control gate lines. The floating gate areas together with the adjacent source and drain lines and with the superimposed control gate lines define respective EPROM cells arranged in a staggered manner in the memory matrix.

REFERENCES:
patent: 4207585 (1980-06-01), Rao
patent: 4326331 (1982-04-01), Gaterman
patent: 4377818 (1983-03-01), Kuo et al.
patent: 4493057 (1985-01-01), McElroy
patent: 4792925 (1988-12-01), Corda et al.
patent: 4896295 (1990-01-01), Corda

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