Ta-containing amorphous alloy layers and process for producing t

Specialized metallurgical processes – compositions for use therei – Processes – Free metal or alloy reductant contains magnesium

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338308, C22C 2702, H01C 1012

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041727185

ABSTRACT:
An amorphous alloy layer comprised of Ta and another element selected from the group consisting of Ni, Co and N is formed by vapor deposition of the select elements onto a low temperature (below about -90.degree. C.) substrate, such as glass. The resultant amorphous alloy layers are useful in thin film technology and are generally stable at room temperatures and up to about 300.degree. C. while exhibiting a specific electrical resistance generally ranging from about 130 to 900 .mu..OMEGA..multidot. cm and exhibit a relatively low temperature coefficient for such resistance, generally ranging from about -950 to +500 ppm/.degree. K.

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