Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-04-26
2011-04-26
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE29249
Reexamination Certificate
active
07932540
ABSTRACT:
A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.
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K. S. Lee, Y. S. Kim, K. T. Lee, and Y. H. Jeong , Process for 20 nm T gate on AI 0.25Ga0.75As/In0.2Ga0.8As/GaAs epilayer using two-step lithography and zigzag foot, Department of Electronic and Electrical Engineering, Pohang University of Science and Technology, San 31, Hyoja, Nam-Gu, Pohang, Gyungbuk 790-784, South Korea, pp. 1869-1872.
Hong Yun-ki
Jeong Yoon-Ha
Jung Sung-woo
Kim Young-Su
Lee Kang-Sung
Bacon & Thomas PLLC
Crawford Latanya
Landau Matthew C
Postech Academy-Industry Foundation
Postech Foundation
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